90512 tkim/22006ea msim/o3103tn (kt)/71598ha (kt)/3277ki/n255mw, ts no.2006-1/7 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2sa1417/2sc3647 bipolar transistor (-)100v, (-)2a, low vce(sat), (pnp)npn single pcp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? adoption of fbet, mbit processes ? high breakdown voltage and large current capacity ? fast switching speed ? ultrasmall size making it easy to provide high-density small-sized hybrid ics speci cations ( ) : 2sa1417 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)120 v collector-to-emitter voltage v ceo (--)100 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)3 a collector dissipation p c 500 mw when mounted on ceramic substrate (250mm 2 0.8mm) 1.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7007b-004 ordering number : en2006d product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sa1417s-td-e 2sa1417t-td-e 2sc3647s-td-e 2SC3647T-TD-E ac lot no. cc lot no. 2sc3647 2sa1417 rank rank 2 3 1 2sc3647 2 3 1 2sa1417
2sa1417 / 2sc3647 no.2006-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)100v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)5v, i c =(--)100ma 100* 400* gain-bandwidth product f t v ce =(--)10v, i c =(--)100ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (25)16 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)100ma (--0.22)0.13 (--0.6)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)1a, i b =(--)100ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)120 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)100 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (80)80 ns storage time t stg (750)1000 ns fall time t f (40)50 ns * : the 2sa1417 / 2s3647 are classi ed by 100ma h fe as follws : rank r s t h fe 100 to 200 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sa1417s-td-e pcp 1,000pcs./reel pb free 2sa1417t-td-e pcp 1,000pcs./reel 2sc3647s-td-e pcp 1,000pcs./reel 2SC3647T-TD-E pcp 1,000pcs./reel v r r b v cc =50v v be = --5v + + 50 input output r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =0.7a for pnp, the polarit y is reversed.
2sa1417 / 2sc3647 no.2006-3/7 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a itr03542 0--2 -- 1 -- 4 --3 --5 2 14 35 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 0.4 0.8 1.2 1.6 2.0 0 itr03543 --20ma --30ma --10ma --5ma --3ma --2ma --1ma i b =0ma 2sa1417 2sc3647 i b =0ma 20ma 30ma 50ma 40ma 10ma 5ma 3ma 2ma 1ma --40ma itr03549 itr03548 itr03546 -- 5 -- 7 -- 7 -- 3 -- 2 -- 0.01 -- 0.1 -- 5 -- 7 -- 3 -- 2 -- 3 -- 2 -- 1.0 -- 0.8 -- 0.4 0 -- 1.2 -- 1.6 -- 2.4 -- 2.0 0.8 0.4 0 1.2 1.6 2.4 2.0 100 1000 5 7 3 2 5 7 3 100 1000 5 7 3 2 5 7 3 57 73 2 0.01 0.1 57 3 23 2 1.0 -- 0.6 -- 0.8 0 -- 0.4 -- 0.2 -- 1.0 -- 1.2 0.6 0.8 0 0.4 0.2 1.0 1.2 itr03547 2sa1417 v ce = --5v 2sc3647 v ce =5v 2sa1417 v ce = --5v 2sc3647 v ce =5v --25 c 25 c ta=75 c --25 c 25 c ta=75 c - -25 c 25 c ta=75 c --25 c 25 c ta=75 c 0 --0.2 --0.6 --0.4 --0.8 --1.0 0.2 0.6 0.4 0.8 1.0 0 10 20 30 40 50 0 itr03545 itr03544 -- 40 -- 30 -- 50 -- 10 -- 20 0 2sc3647 i b =0ma 2sa1417 - -6ma --5ma --4ma --3ma --2ma --1ma i b =0ma 0.5ma 2.5ma 3.0ma 3.5ma 4.0ma 2.0ma 1.5ma 1.0ma h fe -- i c h fe -- i c i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 4.5ma 5.0ma
2sa1417 / 2sc3647 no.2006-4/7 itr03551 itr03550 2 0.01 57 73 0.1 257 323 1.0 10 100 2 3 2 3 5 7 2 1.0 57 73 2 2 10 57 3 100 10 100 2 3 5 7 3 5 7 2sa1417 2sc3647 2sa1417 2sc3647 2sa1417 / 2sc3647 v ce =10v 2sa1417 / 2sc3647 f=1mhz cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf for pnp minus sign is omitted. for pnp minus sign is omitted. f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz it10757 0 0.2 0.4 0.5 0.6 0.8 1.8 1.6 1.4 1.5 1.2 1.0 0 20 80 100 60 40 160 140 120 2sa1417 / 2sc3647 itr03554 -- 1.0 3 -- 10 5 7 5 7 3 2 0.01 3 0.1 5 7 7 5 2 3 1.0 5 5 7 2 3 2 7 -- 0.01 -- 0.1 57 3 2 -- 1.0 57 3 23 2 1.0 3 10 5 7 5 7 3 2 7 0.01 0.1 57 3 2 1.0 57 3 23 2 7 1.0 53 22 itr03555 itr03556 7 10 53 27 100 5 i cp =3a i c =2a 1ms 10ms 100ms dc operation 25 c ta= --25 c 75 c 2sc3647 i c / i b =10 2sa1417 i c / i b =10 25 c ta= --25 c 75 c 2 -- 0.01 -- 0.1 57 73 2 -- 1.0 57 323 2 0.01 0.1 57 73 2 1.0 57 323 -- 1000 -- 100 -- 10 2 3 5 7 2 3 5 7 itr03552 100 10 2 3 5 7 1000 2 3 5 7 itr03553 2sc3647 i c / i b =10 2sa1417 i c / i b =10 --25 c 25 c ta=75 c --25 c 25 c tc=75 c 2sa1417 / 2sc3647 v be (sat) -- i c v be (sat) -- i c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv a s o for pnp minus sign is omitted. ta=25 c single pulse mounted on a ceramic board (250mm 2 ? 0.8mm) p c -- ta collector-to-emitter voltage, v ce -- v collector current, i c -- a mounted on a ceramic boa rd (250mm 2 ? 0.8mm) ambient temperature, ta -- c collector dissipation, p c -- w infinite heat si nk
2sa1417 / 2sc3647 no.2006-5/7 embossed taping speci cation 2sa1417s-td-e, 2sa1417t-td-e, 2sc3647s-td-e, 2SC3647T-TD-E
2sa1417 / 2sc3647 no.2006-6/7 outline drawing land pattern example 2sa1417s-td-e, 2sa1417t-td-e, 2sc3647s-td-e, 2SC3647T-TD-E mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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